Method for fabricating a p-channel field-effect transistor on a semiconductor substrate

ABSTRACT

A p-channel field-effect transistor is formed on a semiconductor substrate. The transistor has an n-doped gate electrode, a buried channel, a p-doped source and a p-doped drain. The transistor is fabricated by a procedure in which, after an implantation for defining an n-type well, an oxidation is performed to form a gate-oxide layer and n-doped polysilicon is subsequently deposited. The latter is doped with boron or boron fluoride particles either in situ or by a dedicated implantation step. In a thermal process, the boron acceptors penetrate through the oxide layer into the substrate of the n-type well, where they form a p-doped zone, which serves for counter doping and sets the threshold voltage. This results in a steep profile that permits a shallow buried channel. The control of the number particles penetrating through the oxide layer is achieved by nitriding the oxide layer in an N 2 O atmosphere.

BACKGROUND OF THE INVENTION FIELD OF THE INVENTION

The invention relates to a method for fabricating a p-channelfield-effect transistor on a semiconductor substrate, which has ann-doped gate electrode, a p-doped source region and a p-doped drainregion.

In the fabrication of memory modules, in particular a dynamic memory(DRAM), the general endeavor as technology advances is to continuouslyreduce the feature sizes of the components of which the respectivemodule is composed. The reason is for improved performance of the moduleand for lower process costs during the semiconductor fabrication. In thecase of CMOS technology that is customarily used to fabricate circuits,both n-channel and p-channel field-effect transistors constitute thecomponents that are fundamentally used together in a circuit. In orderto keep down the costs for fabricating the memory modules, in this casethe gate electrodes of both types are generally embodied with the samedoping, for example an n⁺-type doping in the gates formed aspolysilicon. The corresponding fabrication methods are called singlework function processes.

In contrast to this, however, it is possible, by additional processes,to form in each case different dopings of the gate electrodes for therespective types of field-effect transistors. Although this makes thefabrication more expensive, the respective circuits can be optimized asa result of this, so that these processes, called dual work function,are generally used for logic modules.

Accordingly, in the case of memory modules, by way of example, p-channelfield-effect transistors are formed with n⁺-doped gate electrodes. Inthis case, in order to set a desired threshold voltage of the p-channelfield-effect transistor, it is necessary to carry out a counter dopingwith acceptors at the surface of the substrate below the gate oxide ofthe gate electrode—in the n-type well. This pushes the actual channeldeeper into the substrate—a buried channel is produced.

The n-channel field-effect transistors that are likewise present on thememory module do not require this counter doping; they are operated witha surface channel.

In order to reduce feature sizes, i.e. the sizes of components, on amemory module, it is also necessary to shorten the vertical wellprofiles. The depth of the buried channel is likewise affected by this.In this case, however, the problem arises that boron atoms, for example,segregate into the gate oxide during an oxidation step following theimplantation step required for the counter doping, and thus lead to asharp drop in the particle density of boron atoms at the gate junction.In order to compensate for the drop in the particle number density thatis necessary for setting the threshold voltage of the field-effecttransistor, a higher dose is used in the implantation step for thecounter doping, thereby increasing the depth of the buried channel in adisadvantageous manner. As a result, the effective gate oxide thicknessalso increases, however, so that the short channel behavior of theburied channel degrades in a disadvantageous manner. On account of theimplantation profile produced by the segregation and diffusion, it isalso difficult to realize a reduction of the vertical sizes of thep-channel field-effect transistor.

To date, a number of solutions have been proposed to enable aminiaturization of the buried channel scale. These include, by way ofexample, buried channel epitaxy for suppressing diffusion during briefthermal loading in order to obtain shallow buried channels or the use ofantimony as a donor for so-called anti-punch implantation. The firstsolution leads to considerably increased costs, while problems withcontaminants in the implantation apparatus can occur due to the secondsolution. Further solutions contain gate oxidation processes at lowtemperatures, which, however, have a disadvantageous influence on theretention time of the cell in a memory application due to the wetprocess baths associated therewith, or so-called strong haloimplantation. An ion implantation through the gate oxide, i.e. a counterdoping after the oxidation step, also leads to disadvantageouscontaminants in the subsequent process steps.

SUMMARY OF THE INVENTION

It is accordingly an object of the invention to provide a method forfabricating a p-channel field-effect transistor on a semiconductorsubstrate that overcomes the above-mentioned disadvantages of the priorart methods of this general type, by which shallower buried channels arerealized in the case of p-channel field-effect transistors, and nocomplicated and cost-propelling processes arise in this case.

With the foregoing and other objects in view there is provided, inaccordance with the invention, a method for fabricating a p-channelfield-effect transistor. The method includes the steps of providing asemiconductor substrate, doping the semiconductor substrate with donorsby performing a first implantation for forming an n-doped well, carryingout a thermal oxidation for forming a thin oxide layer on a surface ofthe semiconductor substrate, nitriding the oxide layer in an N₂Oatmosphere to control a permeability of the oxide layer with respect toboron or boron fluoride particles penetrating through the oxide layer,depositing a first layer formed from n-doped polysilicon above the oxidelayer, and p-doping the first layer with the boron or boron fluorideparticles. A p-type dopant concentration of the particles is lower thanan n-type dopant concentration of the first layer. A lithographicprojection step and an etching step are carried out for removing thefirst layer in a first and a second region and for forming an n-dopedgate electrode in a third region located between the first and secondregions on the semiconductor substrate. The semiconductor substrate isdoped with acceptors by performing a second implantation for forming ap-doped source region in the first region and a p-doped drain region inthe second region in the semiconductor substrate. The semiconductorsubstrate is exposed to a temperature elevated to such an extent that anumber of the particles migrate from the first layer through the oxidelayer into the semiconductor substrate for forming a p-doped zone withinthe n-doped well for defining a threshold voltage of the field-effecttransistor.

In accordance with the present invention, in the case of the p-channelfield-effect transistor having the n-doped gate electrode andequivalently thereto the buried channel, the counter doping at thesubstrate surface of the n-type well is no longer achieved by animplantation step with boron or boron fluoride particles, as in the caseof the prior art, before the deposition of the n-doped polysilicon inorder to fabricate the gate electrode. Rather, what is carried out is adoping with boron or boron fluoride particles of the deposited layer.This is followed by a further step in which the particles penetrate—ordiffuse—through the gate oxide layer to the substrate of the n-typewell, where they produce a depth-dependent p-type doping profile. It hasbeen found that the resulting p-type doping profile, e.g. of boronatoms, starting from the gate-substrate junction region, falls steeplyin the vertical direction toward deeper regions and thus advantageouslypermits a significantly shallow channel region (buried channel).However, carrying out an additional implantation step with boron orboron fluoride particles before the deposition of the polysilicon layeris also not precluded by the present invention.

The step of diffusion of the boron or boron fluoride particles from thepolysilicon layer of the gate electrode is made possible by exposing thesemiconductor substrate to an elevated temperature. If the semiconductorsubstrate is a semiconductor wafer for fabricating multilayer integratedcircuits, then a multiplicity of subsequent process steps that arecarried out under elevated temperature conditions typically result.These include, in particular, plasma etching steps, furnace processes,baking steps during the resist coating of subsequent planes, etc. Inthis case, generally sufficiently high temperatures are achieved, sothat the diffusion of the boron or boron fluoride particles suffices tobring about an accumulation of the particles in the substrate, e.g.silicon substrate. The advantage of using subsequent processes that areto be carried out anyway is that there is no need to carry out aseparate thermal process, which leads to a cost saving.

On the other hand, it may be advantageous precisely to carry out aseparate thermal process if defined temperature conditions have to bemet in order to achieve a desired diffusion intensity, so that thedesired doping profile is established.

The invention has the effect of establishing a vertical gradient of thep-type dopant concentration from the gate material, the polysilicon,through the gate oxide layer into the substrate. In a graphicalrepresentation, a steeply falling profile results for the region of theoxide layer and of the substrate. In accordance with the prior art, adiffusion or segregation of the boron takes place in the oppositedirection, i.e. from a maximum value of the doping profile in the regionof the substrate falling toward the gate oxide layer. The shallow dopingprofile in the region of this maximum leads to a disadvantageousdeepening of the buried channel in the case of the method in accordancewith the prior art.

In the case of CMOS technology, the boron or boron fluoride doping ofthe deposited layer of the polysilicon of the gate electrode can becarried out in a common step for p-channel and n-channel field-effecttransistors. If this is not desirable, however, for example because thethreshold voltages of the respective transistor types have to be setdifferently, then it is also possible, as an alternative, to providedoping masks for a separate doping of the polysilicon. The diffusion orpenetration of the boron upon exposure to the elevated temperature thenoccurs only for the n-type well of the p-channel field-effecttransistor. According to the invention, in particular boron, boronfluoride and also further substance compounds containing the elementboron, such as B₂H₆, are suitable as starting substances for thep-doping of the n-doped polysilicon layer of the gate electrode.

The present invention results in a steeper p-type doping profile in then-type well of the p-channel field-effect transistor. As a result ofwhich the depth of the buried channel of the n-type well can also bereduced, so that overall the field-effect transistor can be embodied insmall dimensions. The method steps according to the invention give riseto no significant additional costs or to any extra expenditure withrespect to time.

According to the invention, two alternatives arise by which the p-dopingof the polysilicon layer of the gate electrode can be carried out:

a). Boron or boron fluoride particles are added during the deposition ofthe first layer, i.e. the polysilicon, for the purpose of p-type doping.This may be made possible for example by admixing B₂H₆ with the silanein a CVD reactor. This advantageously obviates a doping step that has tobe carried out separately after the deposition.

b). The p-doping of the first layer, i.e. the polysilicon, after thedeposition of this layer is carried out by an implantation of boron orboron fluoride particles.

In field-effect transistors, the gate electrode is usually formed from alayer stack, for example containing the thin gate oxide layer, thepolysilicon layer, a layer of conductive material, preferably a tungstensilicide, and, as insulating covering layer, a silicon nitride,insulating spaces often being added by lateral oxidation. The p-dopingof the n⁺-doped polysilicon is preferably effected during or after thedeposition of the polysilicon layer, i.e. the two alternates mentioned,and in particular before the subsequent deposition of the tungstensilicide.

In a further refinement, before the first implantation in order to formthe n-type well, a sacrificial oxide layer is formed, which is used as ascreen oxide for improving the implantation properties, and the layer isremoved again after the first implantation.

Advantageous refinements of the present invention result when using adose of 10¹³ to 10¹⁵ particles per cm² for an implantation of the boronor boron fluoride particles into the polysilicon layer, and energy usedfor the particles of 2.5 to 10 keV.

According to a further refinement, the p-doping of the polysilicon layerwith boron or boron fluoride is carried out in such a way that thepolysilicon layer has a dopant concentration of 10¹⁷ to 10¹⁸ particlesper cm², while the necessarily higher dopant concentration of the donorsfor forming the n-doped polysilicon gate electrode has 10¹⁹ to 10²⁰particles per cm².

According to the method, it is possible, in order to set a desiredp-type doping profile for the counter doping in the n-type well duringknown subsequent processes with predetermined temperature conditions, tocontrol the efficiency of the diffusion when exposing the substrate tothe temperature by exposing the substrate with the gate oxide layer onits surface in an N₂O atmosphere. This step is affected after theoxidation and before the deposition of the polysilicon layer. If thegate oxide layer is exposed in this way, then a nitriding of the oxidelayer is affected, which influences the permeability of the oxide layerwith respect to the boron or boron fluoride particles. Depending on theintensity of the nitriding, the permeability of the oxide layer isthereby reduced.

By contrast, if the step of exposing the semiconductor substrate to anelevated temperature is carried out separately, then the intensity ofthe diffusion of the boron or boron fluoride particles into thesubstrate can be achieved by way of the setting the temperature in thisstep.

In accordance with an added mode of the invention, there is the step ofcarrying out the p-doping of the first layer with the particles duringthe step of depositing the first layer. Alternatively, the p-doping ofthe first layer can be carried after the step of depositing the firstlayer by performing an implantation process.

In accordance with an additional mode of the invention, after the firstimplantation and before the depositing of the first layer, no p-dopingof the semiconductor substrate with particles is carried out in order toform a doping profile within the n-doped well.

In accordance with a further mode of the invention, after the p-dopingof the first layer with the particles, a second layer containing anelectrically conductive material is deposited onto the first layer, anda third layer containing a nitride is deposited onto the second layer.

Other features which are considered as characteristic for the inventionare set forth in the appended claims.

Although the invention is illustrated and described herein as embodiedin a method for fabricating a p-channel field-effect transistor on asemiconductor substrate, it is nevertheless not intended to be limitedto the details shown, since various modifications and structural changesmay be made therein without departing from the spirit of the inventionand within the scope and range of equivalents of the claims.

The construction and method of operation of the invention, however,together with additional objects and advantages thereof will be bestunderstood from the following description of specific embodiments whenread in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1G are diagrammatic, sectional views illustrating an exemplaryembodiment of the method according to the invention;

FIG. 2A is a graph illustrating a p-type doping profile resulting from amethod for fabricating a p-channel field-effect transistor with ann-doped gate electrode in accordance with the prior art; and

FIG. 2B is a graph illustrating the p-type doping profiles resultingfrom a method for fabricating a p-channel field-effect transistor withan n-doped gate electrode in accordance with the exemplary embodimentaccording to the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to the figures of the drawing in detail and first,particularly, to FIGS. 1A-1G thereof, there is shown a sequence ofprocess steps in accordance with an exemplary embodiment of a methodaccording to the invention. In this case, a p-channel field-effecttransistor is advantageously formed on a semiconductor substrate 10 of asemiconductor wafer for the fabrication of memory modules, for instanceDRAM modules. FIG. 1A shows a state in which a sacrificial oxide layer20 is formed on the semiconductor substrate 10, which layer 20 isintended to improve the implantation properties of a subsequent dopingstep. First, a deep n-type well 70 of a field-effect transistor isformed by a mask being patterned on the semiconductor substrate bylithographic projection, holes being situated in the mask at thelocations of the p-channel field-effect transistors to be formed. In afirst implantation 100, the substrate 10 uncovered by the holes is dopedwith phosphorus and/or arsenic. After the first implantation 100, thesacrificial oxide layer 20 is removed (FIG. 1B).

In accordance with an object of the present invention, in order tofabricate the memory modules, the patterning of gate electrodes is to berealized e.g. in accordance with cost-effective single work functionprocesses. In the present example, n-doped gate electrodes are formedfor the n-channel and p-channel field-effect transistors to be formed.In this case, in accordance with the prior art, a counter doping of theweakly n-doped substrate with boron atoms was carried out after theremoval of the sacrificial oxide 20—if appropriate also before this.According to the present invention, this step can be omitted, and in theexample, the method is continued by carrying out a thermal oxidation inorder to form a thin gate oxide layer 30 on the substrate surface. In achemical vapor deposition (CVD) process, a polysilicon layer heavilydoped with arsenic and/or phosphorus is subsequently deposited as afirst layer 40 (FIG. 1C).

A counter doping of the superficial substrate region in the n-type well70 that is necessary for setting the threshold voltage of thefield-effect transistor is initiated by a second implantation 120. Inthis case, boron atoms are implanted into the polysilicon of the firstlayer 40 in order to produce a p-type doping which is weaker than then⁺-type doping by the phosphorus and/or arsenic atoms. The dopantconcentration of the donors in the polysilicon is 10²⁰ particles percm², while the dopant concentration of the boron atoms as acceptors is10¹⁸ particles per cm² (FIG. 1D).

After the second implantation 120, a gate stack can be completed inlayer engineering terms by depositing a tungsten silicide layer 50 as anelectrically conductive material onto the polysilicon (FIG. 1E). Asilicon nitride 60 is deposited thereon as an insulation layer (FIG.1F).

In order to uncover the source and drain regions 90, 95 to be formed,the gate electrode containing the layer stack of polysilicon, tungstensilicide and silicon nitride is patterned in a further lithographicstep. In order to uncover a first region for the source region 90 and asecond region of the substrate surface for the drain region 95, plasmaetching steps are respectively carried out in order to remove thesilicon nitride, the tungsten silicide and the polysilicon. Furthermore,a heat treatment of the gate contact is necessary. Considerabletemperatures occur during these processes, so that the boron atoms inthe polysilicon, which have a comparatively high diffusivity under thesetemperatures, are excited to penetrate from the polysilicon of the firstlayer 40 through the oxide layer 30 into the substrate 10 in order toform a lightly p-doped zone 80.

In a further lithographic step, a perforated mask is applied in order todefine the p-doped regions for the source and drain terminals of thep-channel field-effect transistors. By a third implantation 140, theuncovered substrate regions in the holes are implanted with boronfluoride, thereby forming a heavily p-doped source region 90 and aheavily p-doped drain region 95 for the p-channel field-effecttransistor.

A comparison of the resulting doping profile in accordance with theprior art and in accordance with the present method is illustrated inFIGS. 2A and 2B. In the diagrams, the depth measured from the upper edgeof the polysilicon layer is entered on the x axis, while the y axisshows the dopant concentration of the boron. The depth ranges assignedto the individual layers are depicted above the diagrams.

In FIG. 2A, which shows the profile in accordance with the prior art,the broken line shows the resulting profile which would be presentdirectly after an implantation 150 with boron atoms onto the substratebefore the oxidation. This profile, which is advantageous up to thatpoint, degrades after the oxidation 180, the maximum situated at thejunction between the gate stack and the substrate being attenuated byback diffusion of the boron atoms into the gate stack. In order to holdthe level of the dopant concentration at the junction, therefore, alarger dose is implanted, which can be discerned as the solid line inFIG. 2A. A characteristic length 200 for the doping depth iscomparatively increased as a result. The depth of the channel of then-type well 70 is adversely affected as a result.

FIG. 2B shows the corresponding profile that arises in accordance withapplication of the method of the present invention. After the secondimplantation 120, i.e. the doping of the polysilicon with boron atoms orboron fluoride with an energy of 5 keV and a dose of 10¹⁴ ions per cm²,a shallow doping profile for the dopant concentration of the boron isestablished in the region of the first layer, i.e. the polysilicon. Ifthe step of exposure 190 to an elevated temperature is then performed,which can usually only begin with the etching processes for completingthe gate electrode, the boron atoms diffuse or penetrate through theoxide layer 30 into the substrate 10 in order to form a p-doped zone.Within the substrate 10, the maximum of the profile of the dopantconcentration is naturally situated precisely at the junction betweenthe substrate 10 and the first layer 40 containing the polysilicon. Acharacteristic length 200′ for the doping profile is thereforesignificantly smaller than in the above-mentioned case in accordancewith the prior art.

1. A method for fabricating a p-channel field-effect transistor, whichcomprises the steps of: providing a semiconductor substrate; doping thesemiconductor substrate with donors by performing a first implantationfor forming an n-doped well; carrying out a thermal oxidation forforming a thin oxide layer on a surface of the semiconductor substrate;nitriding the oxide layer in an N₂O atmosphere to control a permeabilityof the oxide layer with respect to one of boron and boron fluorideparticles penetrating through the oxide layer; depositing a first layerformed from n-doped polysilicon above the oxide layer; p-doping thefirst layer with particles selected from the group consisting of boronparticles and boron fluoride particles, a p-type dopant concentration ofthe particles being lower than an n-type dopant concentration of thefirst layer; carrying out a lithographic projection step and an etchingstep for removing the first layer in a first and a second region and forforming an n-doped gate electrode in a third region located between thefirst and second regions on the semiconductor substrate; doping thesemiconductor substrate with acceptors by performing a secondimplantation for forming a p-doped source region in the first region anda p-doped drain region in the second region in the semiconductorsubstrate; and exposing the semiconductor substrate to a temperatureelevated to such an extent that a number of the particles migrate fromthe first layer through the oxide layer into the semiconductor substratefor forming a p-doped zone within the n-doped well for defining athreshold voltage of the field-effect transistor.
 2. The methodaccording to claim 1, which comprises carrying out the p-doping of thefirst layer with the particles during the step of depositing the firstlayer.
 3. The method according to claim 1, which comprises carrying outthe p-doping of the first layer after the step of depositing the firstlayer by performing a third implantation process.
 4. The methodaccording to claim 1, wherein no p-doping of the semiconductor substratewith the particles in order to form a doping profile within the n-dopedwell is carried out after the first implantation and before thedepositing of the first layer.
 5. The method according to claim 1, whichcomprises after the p-doping of the first layer with the particles,performing the steps of: depositing a second layer containing anelectrically conductive material onto the first layer; and depositing athird layer containing a nitride onto the second layer.
 6. The methodaccording to claim 1, which comprises before performing the firstimplantation, forming a sacrificial oxide layer and removing thesacrificial oxide layer after the first implantation is performed. 7.The method according to claim 3, which comprises carrying out the thirdimplantation with a dose of 10¹³ to 10¹⁵ particles per squarecentimeter.
 8. The method according to claim 7, which comprises carryingout the third implantation process with an energy of 2.5 to 10 keV. 9.The method according to claim 1, which comprises: forming the n-dopedpolysilicon of the first layer to have a dopant concentration of 10¹⁹ to10²⁰ particles per cubic centimeter; and carrying out the p-doping ofthe n-doped polysilicon with the particles such that the first layer hasa dopant concentration of 10¹⁷ to 10¹⁸ particles per cubic centimeter.